FIR lasing based on group V donor transitions in silicon
- 1 January 2001
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 302-303, 342-348
- https://doi.org/10.1016/s0921-4526(01)00452-5
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Stimulated Emission from Donor Transitions in SiliconPhysical Review Letters, 2000
- Dynamic Localization, Absolute Negative Conductance, and Stimulated, Multiphoton Emission in Sequential Resonant Tunneling Semiconductor SuperlatticesPhysical Review Letters, 1995
- Longliving excited states of impurities in SiSolid State Communications, 1995
- Quantum Cascade LaserScience, 1994
- Esaki-Tsu superlattice oscillator: Josephson-like dynamics of carriersPhysical Review Letters, 1993
- Tunable fir lasers in semiconductors using hot holesInfrared Physics, 1987
- Spectroscopy of the solid-state analogues of the hydrogen atom: donors and acceptors in semiconductorsReports on Progress in Physics, 1981
- Excitation spectrum of bismuth donors in siliconPhysical Review B, 1975
- Recombination of Electrons and Donors in-Type GermaniumPhysical Review B, 1961
- Cascade Capture of Electrons in SolidsPhysical Review B, 1960