A simple model for predicting contrast in photoresists
- 1 September 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 32 (9) , 1896-1898
- https://doi.org/10.1109/t-ed.1985.22218
Abstract
A simple model that predicts the contrast of positive and negative photoresists, given the optical absorption of the resist and the spectral emission intensity of the exposing tool, is proposed. Predictions for Kodak-747 Microresist, AZ2400, PR102, and Dupont Elvacite 2041PMMA resists are excellent. The model is equally applicable to exposures involving pulsed excimer laser radiation.Keywords
This publication has 0 references indexed in Scilit: