KrF-Excimer-Laser Induced Absorption in Synthetic Fused Silica
- 1 November 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (11R) , 6785-6786
- https://doi.org/10.1143/jjap.36.6785
Abstract
KrF-excimer-laser (5.0 eV) induced absorption in synthetic fused silica synthesized by flame hydrolysis of SiCl4 (type-III-fused silica) was measured. Induced absorption is a Gaussian absorption band peaking at 5.8 eV, which is different from that of ArF-excimer-laser induced absorption consisting of five absorption bands at 6.5, 5,8, 5.4, 5.0 and 4.8 eV. Peak intensities of the absorption band decrease with increasing OH content. When the OH content exceeds ≈1000 ppm in mass, the internal absorption at 5.0 eV approach a constant value ≈1 ×10-4 cm-1Keywords
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