Thermodynamic properties of Si-Ge alloys
- 15 April 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 37 (12) , 6983-6990
- https://doi.org/10.1103/physrevb.37.6983
Abstract
A combined electronic-structure and statistical-mechanical approach has been used to calculate the thermodynamic properties of alloys. Since the long-range ordered structures are found to be unstable, only the disordered alloys have been studied. The thermodynamic functions such as entropy, enthalpy, Gibbs free energy, and others are calculated as functions of temperature and concentration. The phase diagram is also calculated and the critical temperature is predicted to be around 360 K. The tendency to clustering is found to be very small which provides further support for the instability of ordered bulk Si-Ge structures. We have studied the effects of hydrostatic pressure on both the phase diagram and the thermodynamic functions. It has been found that by increasing the pressure the instability region shrinks and moves toward the Ge side, while the critical temperature increases.
Keywords
This publication has 23 references indexed in Scilit:
- Atomic bonding and thermodynamic properties of pseudo-binary semiconducting alloysJournal of Physics C: Solid State Physics, 1987
- Effect of chemical and elastic interactions on the phase diagrams of isostructural solidsPhysical Review B, 1987
- First-Principles Calculation of Semiconductor-Alloy Phase DiagramsPhysical Review Letters, 1987
- Bond lengths around isovalent impurities and in semiconductor solid solutionsPhysical Review B, 1984
- Mixing enthalpy and composition fluctuations in ternary III–V semiconductor alloysJournal of Physics and Chemistry of Solids, 1984
- Density-functional theory applied to phase transformations in transition-metal alloysPhysical Review B, 1983
- Miscibility gaps in quaternary III/V alloysJournal of Crystal Growth, 1982
- Calculation of ternary and quaternary III–V phase diagramsJournal of Crystal Growth, 1974
- Elastic Properties of ZnS Structure SemiconductorsPhysical Review B, 1970
- Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond StructurePhysical Review B, 1966