Formation and Properties of Anodic Oxide Films on Indium Antimonide
- 1 December 1968
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 7 (12)
- https://doi.org/10.1143/jjap.7.1491
Abstract
The surfaces of the high purity n-type InSb were anodized in a KOH solution under the constant current conditions, and the electrical characteristics of the resultant oxide films were measured at room temperature at liquid nitrogen temperature. A new etching technique for indium antimonide is presented which gives a flat mirror-like surface prior to anodization. At liquid nitrogen temperature, the resistivity of the film is evaluated to be more than 1016Ω-cm, and the breakdown voltage is 100 Volts/µm. The dielectric constant at 1 MHz is 11 for thin films, showing a little dependence on the thickness of the film. A transient behavior in the current-voltage characteristics of the film was observed at both temperatures.Keywords
This publication has 8 references indexed in Scilit:
- Orientation dependence of surface charge on anodized InSbSolid-State Electronics, 1967
- InSb MOS INFRARED DETECTORApplied Physics Letters, 1967
- SURFACE INVERSION AND ACCUMULATION OF ANODIZED InSbApplied Physics Letters, 1965
- InSb Diodes under Controlled Surface ConditionsJournal of Applied Physics, 1964
- Photocontrolled Surface Conductance in Anodized InSbJournal of Applied Physics, 1964
- Anodization of InSbJournal of the Electrochemical Society, 1960
- The Kinetics and Mechanism of Formation of Anode Films on Single-Crystal InSbJournal of the Electrochemical Society, 1957
- Space-Charge-Limited Currents in SolidsPhysical Review B, 1955