Effect of n-butane impurity on electron mobility and electron–ion recombination rate constant in solid neopentane
- 1 June 1979
- journal article
- letter
- Published by AIP Publishing in The Journal of Chemical Physics
- Vol. 70 (11) , 5331-5332
- https://doi.org/10.1063/1.437300
Abstract
The electron mobility and recombination rate were determined from measurements of the decay of the electron current induced by pulse x‐ray irradiation under a DC electric field. (AIP)Keywords
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