A model for resonant and sequential tunneling in the presence of scattering
- 15 May 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (10) , 6432-6437
- https://doi.org/10.1063/1.345116
Abstract
In this paper we present a model to calculate the coherent and the sequential tunneling (or incoherent) transmission probabilities across a double-barrier heterojunction in the presence of scattering centers. The model, based on the previously reported transmission-line technique, provides a simple, yet powerful method to integrate these two different tunneling mechanisms. It is shown that if the scattering processes are taken into account, the coherent tunneling mechanism is strongly affected near the resonant peaks. On the other hand, the incoherent tunneling process, which arises due to the presence of scattering centers, dominates as the scattering lifetime is decreased. Effects of the scattering process on the current-voltage characteristics are investigated.This publication has 18 references indexed in Scilit:
- Coherent and sequential tunneling in series barriersIBM Journal of Research and Development, 1988
- Space charge effects in resonant tunnellingSemiconductor Science and Technology, 1987
- Coherence of resonant tunneling in heterostructuresPhysical Review B, 1987
- Equivalence between resonant tunneling and sequential tunneling in double-barrier diodesApplied Physics Letters, 1987
- Calculation of transmission tunneling current across arbitrary potential barriersJournal of Applied Physics, 1987
- Transfer Hamiltonian description of resonant tunnellingJournal of Physics C: Solid State Physics, 1986
- Frequency limit of double-barrier resonant-tunneling oscillatorsApplied Physics Letters, 1985
- Effect of Inelastic Processes on Resonant Tunneling in One DimensionPhysical Review Letters, 1985
- Physics of resonant tunneling. The one-dimensional double-barrier casePhysical Review B, 1984
- Tunneling in a finite superlatticeApplied Physics Letters, 1973