Application of surface waves to the study of semiconductor surface state using the separated−medium acoustoelectric effect

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Abstract
It is reported that the surface state of a semiconductor, e.g., germanium can be studied by the measurements of the acoustoelectric voltage due to the coupling with the elastic surface wave on an adjacent piezoelectric material, e.g., LiNbO3. The method is superior to the field−induced conductance method with regards to sensitivity, ease of sample preparation, and applicability to a sample of higher conductivity.

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