Hydrogen-sensitive breakdown voltage in the I–V characteristics of tin dioxide-based semiconductors
- 31 July 1996
- journal article
- Published by Elsevier in Sensors and Actuators B: Chemical
- Vol. 33 (1-3) , 89-95
- https://doi.org/10.1016/0925-4005(96)01931-4
Abstract
No abstract availableKeywords
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