Optimum impurity distribution for minimum base transit time in junction transistors

1 September 1974

journal article
research article
Published by Taylor & Francis in International Journal of Electronics

Vol. 37 (3) , 435-436
https://doi.org/10.1080/00207217408900542

Abstract

Considering the effect of field dependent carrier mobility, an optimum impurity doping distribution for minimum base transit time has been obtained using variational methods. It is shown that the exponential doping distribution in the base region offers minimum transit time.

Keywords

DISTRIBUTION FOR MINIMUM
TRANSIT TIME
BASE TRANSIT
OPTIMUM IMPURITY
IMPURITY DISTRIBUTION
MINIMUM BASE
JUNCTION TRANSISTORS

This publication has 1 reference indexed in Scilit:

Optimum doping distribution for minimum base transit time
IEEE Transactions on Electron Devices, 1967