Surface disorder induced Kikuchi features in reflection high-energy electron diffraction patterns of static and growing GaAs(001) films

Publisher Website
Google Scholar
Abstract
Reflection high-energy electron diffraction (RHEED) investigations have been carried out on reconstructed GaAs(001)-2×4 surfaces under static conditions and during growth by molecular-beam epitaxy. Intensity modulation of streaks in the RHEED patterns is strongly enhanced during growth and high-intensity regions are found at angular positions corresponding to intersections of Kikuchi lines and streaks. The features are explained by a model assuming forward diffuse scattering in the surface layer due to long-range disorder followed by Kikuchi-type diffraction in the bulk.

This publication has 0 references indexed in Scilit: