Si-GaAs(001) superlattices
- 28 September 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (13) , 1570-1572
- https://doi.org/10.1063/1.107499
Abstract
Si‐GaAs(001) superlattices have been grown by molecular beam epitaxy. X‐ray interference measurements and Raman spectroscopy studies in the acoustic range for (Si)2(GaAs)28 and (Si)3(GaAs)50 superlattice structures demonstrate that pseudomorphic growth conditions were achieved. Raman data in the optical range show large (∼50–70 cm−1) confinement‐ and strain‐induced shifts of the Si‐like optical modes.Keywords
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