Electrical effects in laser-damaged phototransistors

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Abstract
Current‐voltage behavior of the dark current and photocurrent, photocurrent frequency response, and light spot profiles have been measured for silicon phototransistors irradiated by short pulses from a neodymium glass laser above energy densities of 10 J/cm2. The principal bulk damage effects observed were the generation of an Ohmic dark current, the formation of localized conduction paths, and the narrowing of the base layer of the device. An empirical model was used to account for these results and was shown to be consistent with previous predictions based upon the migration of phosphorus across the detector by laser‐induced melting and subsequent refreezing.

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