New contact resistance profiling method for the assessment of III–V alloy multilayer structures
- 25 May 1978
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 14 (11) , 328-330
- https://doi.org/10.1049/el:19780223
Abstract
A practical technique for the assessment of multilayer III–V structures is described which is based on the measurement of the contact resistance between a tungsten carbide probe and an angle lapped sample surface. The technique has been applied to homostructure and double heterostructure layers of GaAs, GaAlAs, InP and GaInAsP and quantitative information on the doping profiles has been obtained by calibration against binary material samples of known impurity levels.Keywords
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