Stimulated emission from a CdTe/HgCdTe separate confinement heterostructure grown by molecular beam epitaxy
- 21 May 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (21) , 2077-2079
- https://doi.org/10.1063/1.102977
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Stimulated emission from a Hg1−xCdxTe epilayer and CdTe/Hg1−xCdxTe heterostructures grown by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1990
- Hg1-xCdxTe as a semiconductor laserSemiconductor Science and Technology, 1989
- Electron-mass anisotropy in type-III HgZnTe-CdTe superlatticesPhysical Review Letters, 1989
- HgMnTe light emitting diodes and laser heterostructuresJournal of Vacuum Science & Technology A, 1988
- New achievements in Hg1−xCdxTe grown by molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1988
- Surface-energy-driven secondary grain growth in thin Au filmsApplied Physics Letters, 1986
- Superlattice band structure in the envelope-function approximationPhysical Review B, 1981
- Quantum-well heterostructure lasersIEEE Journal of Quantum Electronics, 1980
- Optically pumped LPE-grown Hg1−xCdxTe lasersJournal of Electronic Materials, 1979
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957