Arsenic passivation: a possible remedy for MBE growth-interruption problems

5 January 1984

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 20 (1) , 47-48
https://doi.org/10.1049/el:19840033

Abstract

Amorphous arsenic passivation was used to suppress the interfacial carrier depletion at an MBE growth-interrupted interface. The protection of the surface against room air, heat-treatment (180°C) in room air, and deionised water is confirmed.

Keywords

AMORPHOUS AS
MOLECULAR BEAM EPITAXY
GROWTH-INTERRUPTION PROBLEMS
ROOM AIR
DEIONISED WATER
SURFACE PROTECTION
HEAT-TREATMENT
INTERFACIAL CARRIER DEPLETION SUPPRESSION
PASSIVATION
MBE
180°C
SEMICONDUCTOR GROWTH