Electrical resistivity and Hall effect in Fe-Zr amorphous sputtered films

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Abstract
Fe-Zr amorphous films were prepared by a co-sputtering technique, and the electrical resistivity and the Hall effects were investigated. The resistivity ρ at 4.2 K as a function of composition exhibits a broad minimum around 15% Zr, while the magnetization 4πMs indicates a broad maximum at the same composition. The high-field susceptibility dramatically increases below 15% Zr. In the high concentration range the spontaneous Hall coefficient Rs and the magnetization 4πMs decrease, while the resistivity increases, and hence the Hall conductivity γH decreases with increasing Zr content. The ordinary Hall coefficient R0, separated from the spontaneous Hall coefficient Rs, slightly increases with increasing Zr content, showing a positive sign in contrast to that of Co and Ni-base amorphous alloys.