Equivalent-circuit consideration of dual-gate MESFETs at high frequency
- 18 August 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (17) , 705-706
- https://doi.org/10.1049/el:19830480
Abstract
The simplified high-frequency equivalent circuit of a dual-gate FET is described. It is shown that the input impedance is similar to that of a single-gate FET but the output resistance and capacitance (parallel equivalent circuit) are higher. The output resistance and the transconductance decrease as frequency increases. The unilateral gain of a dual-gate FET rolls off 12 dB/octave.Keywords
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