Drive Current Margins for Magnetic Film Memories
- 1 April 1963
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 34 (4) , 1165-1166
- https://doi.org/10.1063/1.1729415
Abstract
The effect of spurious fields on magnetic‐film memory operation is to considerably reduce digit‐current margins by lowering disturb and raising writing thresholds. These fields are generated by fringing from drive lines, closure flux of neighboring magnetic elements, and sneak currents in the word selection matrix. Margins for the 256‐word 370‐nsec memory of the Lincoln Laboratory FX‐1 computer are described and the process of ``creep'' disturbing which occurs due to spurious transverse fields in combination with normal digit fields is examined as well as methods for improving margins.This publication has 3 references indexed in Scilit:
- Domain Wall Creeping in Thin Permalloy Films [Letter to the Editor]IBM Journal of Research and Development, 1962
- Magnetic Film Memory DesignProceedings of the IRE, 1961
- Operating Characteristics of a Thin Film MemoryJournal of Applied Physics, 1959