Electron field emission through a very thin oxide layer
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (10) , 2373-2376
- https://doi.org/10.1109/16.88528
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Effect of organic contaminants on the oxidation kinetics of silicon at room temperatureApplied Physics Letters, 1986
- Operation of Tunnel-Emission DevicesJournal of Applied Physics, 1961