Trapping levels in silicon nitride
- 18 October 1968
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 4 (21) , 468-469
- https://doi.org/10.1049/el:19680365
Abstract
The trapping levels in silicon nitride have been investigated using the thermally stimulated current technique. Traps at between 0.50 and 0.90eV below the conduction band of the nitride were found, as well as a distribution of traps at and near the silicon-silicon nitride interface about 0.10eV below the conduction band of the silicon.Keywords
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