Integration of carbon nanotubes into diluted magnetic semiconductor
- 16 September 2005
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 87 (12) , 121915
- https://doi.org/10.1063/1.2045557
Abstract
Carbon nanotubes (CNTs) were grown using catalytic pyrolysis of acetylene on a thin-film-diluted magnetic semiconductor ( doped ) without consuming the host layer of semiconductor . Effects of the thickness of the diluted magnetic semiconductor layer and the stacking structure on the growth of the carbon nanotubes were examined. The external diameter and crystalline structure of the nanotubes showed correlation with the structure of the magnetic catalyst Co within the nanotubes or at the end of the tube. After the growth of CNTs, the layer still maintained its semiconducting properties in view of the temperature dependent resistance behavior. Moreover, we studied the influence of the electrical resistivity, i.e, the thickness as a process parameter, of the diluted magnetic semiconductor underlayer, which determines the growth height and the crystalline quality of the carbon nanotubes, on the nanotubes’ growth behavior. Finally, we measured the magnetic behavior of the heterosystem and interpreted the results due to the action of the properties of the catalytic diluted magnetic semiconductor underlayer. Our result shows a promising recipe for the fabrication of one-dimensional CNT—two-dimensional magnetic-metal-doped magnetic semiconductor and/or wide-band-gap insulator.
Keywords
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