Si1−xGex/Si asymmetric 2×2 electro-optical switch of total internal reflection type
- 4 December 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (23) , 3379-3380
- https://doi.org/10.1063/1.114899
Abstract
Based on plasma dispersion of Si1−xGex, we have fabricated asymmetric 2×2 switches of total internal reflection type, in which Si1−xGex was grown by molecular beam epitaxy. The optimum intersecting angle is 4°, and the crosstalk is less than −10.6 dB at 76 mA injection current. The insertion loss is 2.8 dB, and the switch time is 0.6 μs.Keywords
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