p-i-n epitaxial structures for high power devices
- 1 August 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 23 (8) , 823-825
- https://doi.org/10.1109/T-ED.1976.18493
Abstract
P-i-n structures have been made with avalanche blocking voltages between 1200 and 5100 V, using an Al-diffusion profile and a thick epitaxial film to obtain the buffering n-layer. The device areas are between 2.5 and 10 cm2. Epitaxial films of ∼50-µm thickness with a very low defect density have been obtained after an in situ gas phase etching with SF6of approximately 30 µm. The application of these p-i-n structures as a basic element for the development of very fast high voltage reverse non-blocking thyristors is briefly discussed.Keywords
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