35-GHz transferred electron amplifiers

1 January 1973

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 61 (10) , 1502-1504
https://doi.org/10.1109/PROC.1973.9305

Abstract

GaAs transferred electron amplifiers with 110-mW saturated power output at 35 GHz have been designed and fabricated. Small signal gain of 13 dB, 3-GHz bandwidth, and noise figures as low as 16.2 dB have been observed. Two basic amplifier designs which have been investigated are described.

Keywords

ELECTRONS
GUNN DEVICES
LAPLACE EQUATIONS
POWER AMPLIFIERS
NOISE FIGURE
DOPING
SUBSTRATES
MAXWELL EQUATIONS
POISSON EQUATIONS
TRANSFORMS

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