Single-mode InGaAsP/InP buried waveguide structures grown on channelled {111}B InP substrates
- 16 September 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (19) , 812-813
- https://doi.org/10.1049/el:19820552
Abstract
InGaAsP buried waveguide structures were fabricated by LPE on channelled {111}B InP substrates. Control of the channel depth and growth time enabled waveguides of small dimensions to be produced which supported one TE and one TM polarised mode only.Keywords
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