Design Theory for Depletion Layer Transistors

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Abstract
A new class of high-frequency transistors, the Depletion Layer Transistors (DLT), utilizes maximum attainable carrier velocities in solids by injecting electrons or holes into the high electric fields that prevail in properly designed depletion layers of reverse-biased p-n junctions. The resulting short transit times should insure operation up to microwave frequencies. The design theory is presented for a particular example of a depletion layer transistor, discussing its low- and high-frequency, small-signal behavior, power gain, and stability. Other conceivable structures and modes of operation for DLT's are described and the potential importance of the depletion layer principle for solid-state microwave amplification is emphasized.

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