Diffusion of silicon into amorphous FexB100−x

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Abstract
The diffusion of silicon into FexB100−x amorphous alloys for 74<x−23 m2/s and at 373 °C was 2.8×10−21 m2/s, both independent of composition. This result indicates that the rate limiting process in diffusion of Si is independent of any structural changes occurring as the composition of Fe–B varies. The diffusion of silicon into Fe82B18 has also been studied as a function of temperature giving an activation energy of 2.0±0.4 eV/atom with a preexponential constant of 5.7×10−4 m2/s. No effect on the shape of the interface or the value of D was found for various surface polishing procedures or for preannealing the amorphous alloy before depositing the silicon. It has been concluded that the rate limiting step in the diffusion of Si in amorphous Fe–B alloys is different than the mechanism involved in stress relaxation and in crystallization but may be the same as is involved in the formation of the induced magnetic anisotropy. On the basis of the atomic size dependence for diffusion of various species through a variety of amorphous metal‐metalloid alloys it is postulated that the diffusion of silicon proceeds by a mechanism similar to interstitial diffusion assumed for boron diffusion.

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