Plasma‐Enhanced Etching of Tungsten and Tungsten Silicide in Chlorine‐Containing Discharges

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Abstract
Results are presented for the etching of W and in and plasmas. Etch rates were measured for conditions ranging from 0.1 to 1.0 torr pressure, 30° to 170°C electrode temperature, 0.2 to 1.0 W/cm2 power density, and 3 to 200 sccm flow rate. Etch rates varied from below 10 nm/min to 90 nm/min for tungsten and to 450 nm/min for the silicide. Residence time effects on tungsten etching were also studied. Small additions of significantly increased the etch rates of both W and and improved the reproducibility. Results suggest that chemical processes have a significant effect on etch characteristics, despite the low vapor pressure of and .

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