Phase formation by ion beam mixing in Ni/Al, Pd/Al, and Pt/Al bilayers
- 1 November 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (9) , 831-833
- https://doi.org/10.1063/1.94511
Abstract
Ion beam and thermal reactions in thin‐film bilayers of Ni/Al, Pd/Al, and Pt/Al have been investigated using electron diffraction and Rutherford backscattering (RBS). Ion mixing was performed with 600‐keV Xe ions at room temperature with doses ranging between 0.25 to 12×1015 ions/cm2. The compositions of the ion induced crystalline phases, NiAl and PdAl, differ both from the overall atomic compositions of the ion mixed layers (as determined by RBS) and from the compositions of the layers obtained by thermal annealing. In Pt/Al bilayers ion mixing forms an amorphous region with atomic composition Pt40Al60 while thermal annealing shows the formation of crystalline Pt2Al3. We believe that actual crystal compound formation during mixing is dependent on the high quench rate in the collision cascade region.Keywords
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