Dual wavelength InGaAsP/Inp TJS lasers

7 January 1982

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 18 (1) , 18-20
https://doi.org/10.1049/el:19820014

Abstract

InGaAsP/InP dual wavelength TJS lasers emitting at 1.17 μm and 1.3 μm wavelengths at room temperature are described. The threshold currents for both diodes are the same. The fabrication procedure and characteristics of the lasers are presented.

Keywords

1.17 MICRONS WAVELENGTH
TRANSVERSE JUNCTION STRIPE LASER
1.3 MICRONS WAVELENGTH
INGAASP-INP LASER
SEMICONDUCTOR LASER
DUAL WAVELENGTH TJS LASERS
ROOM TEMPERATURE
THRESHOLD CURRENTS
CHARACTERISTICS
FABRICATION PROCEDURE

This publication has 1 reference indexed in Scilit:

InGaAsP/InP dual wavelength lasers
Electronics Letters, 1982