Monte Carlo simulation of ion implantation into single-crystal silicon including new models for electronic stopping and cumulative damage
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 745-748
- https://doi.org/10.1109/iedm.1990.237093
Abstract
The authors have developed a substantially improved physically based model for boron implantation into single-crystal silicon based on the Monte Carlo code MARLOWE. This model accounts for all relevant implant parameters and incorporates a local electron concentration-dependent electronic stopping model and a cumulative damage model. Good agreement with experimental profiles is obtained not only as a function of energy but also as a function of tilt angle, rotation (twist) angle, and dose.<>Keywords
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