Optical properties of GaN grown over SiO2 on SiC substrates by molecular beam epitaxy
- 12 January 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (2) , 244-245
- https://doi.org/10.1063/1.120698
Abstract
We investigate the optical properties of GaN grown over SiO2 on SiC substrates by electron cyclotron resonance assisted molecular beam epitaxy. The photoluminescence spectra and refractive index of GaN were compared for GaN/SiO2/SiC and GaN/SiC. Strong band-edge luminescence was observed at 3.40 eV from the GaN on both SiO2/SiC and on SiC. No defect-related yellow luminescence was observed. The refractive index of GaN at 1.96 eV (632.8 nm) was measured at 2.22 and 2.24 for GaN/SiO2/SiC and GaN/SiC, respectively.Keywords
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