Dielectric properties of chemically vapour-deposited Si3N4
- 1 March 1989
- journal article
- research article
- Published by Springer Nature in Journal of Materials Science
- Vol. 24 (3) , 821-826
- https://doi.org/10.1007/bf01148763
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- The ‘universal’ dielectric responseNature, 1977
- Chemical vapour-deposited silicon nitrideJournal of Materials Science, 1976
- New interpretation of dielectric loss peaksNature, 1975
- Characterization of Silicon Nitride FilmsJournal of the Electrochemical Society, 1971
- The conduction processes in silicon nitrideCanadian Journal of Physics, 1968
- Electrical Properties of Vapor-Deposited Silicon Nitride and Silicon Oxide Films on SiliconJournal of the Electrochemical Society, 1968
- Some Properties of Vapor Deposited Silicon Nitride Films Using the SiH[sub 4]-NH[sub 3]-H[sub 2] SystemJournal of the Electrochemical Society, 1967
- Formulae for Dielectric Constant of MixturesProceedings of the Physical Society. Section B, 1957
- The Influence of a Transverse Magnetic Field on the Conductivity of Thin Metallic FilmsPhysical Review B, 1950
- Dielektrische verluste verschiedener gläser im kurzwellengebiet in abhängigkeit von der temperaturPhysica, 1943