Epitaxial Growth of Er3+-Doped CaF2 by Molecular Beam Epitaxy
- 1 April 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (4A) , L435
- https://doi.org/10.1143/jjap.35.l435
Abstract
Monocrystalline Er3+-doped CaF2 layers are grown on CaF2 substrates by molecular beam epitaxy (MBE) with Er3+ concentration up to 31.2 wt%. The lattice parameter and the crystallinity of the epilayers are investigated by X-ray diffraction analysis, electron probe microanalysis, and scanning electron microscopy. Green light emission at 538 nm is generated by upconversion for the first time, using a 798 nm laser diode pump. Maximum emission intensity at this wavelength is obtained at an Er3+ concentration of 13.3 wt%.Keywords
This publication has 11 references indexed in Scilit:
- Growth mode characterisation of CaF2 grown on vicinal Si(111) substrates by molecular beam epitaxyJournal of Crystal Growth, 1995
- Upconverting Tm3+ doped Ba–Y–Yb–F thin film waveguides for visible and ultraviolet light sourcesApplied Physics Letters, 1995
- Er3+ doping of CaF2 layers grown by molecular beam epitaxyApplied Physics Letters, 1993
- Photoluminescence from submicron CaF2:Nd films grown epitaxially on Si(111) and Al(111)/Si(111)Applied Physics Letters, 1992
- Electrical properties of low-temperature-grown CaF2 on Si(111)Applied Physics Letters, 1992
- Optimal growth conditions for molecular-beam epitaxy of Nd3+ doped CaF2Applied Physics Letters, 1991
- Nd3+ incorporation in CaF2 layers grown by molecular beam epitaxyApplied Physics Letters, 1991
- Blue-green (450-nm) upconversion Tm^3+:YLF laserApplied Optics, 1989
- Defects in epitaxial multilayers I. Misfit dislocationsJournal of Crystal Growth, 1974
- Infrared-Pumped Visible LaserApplied Physics Letters, 1971