Vacancies, Interstitials, and Rare Gases in Fluorite Structures

Abstract
We have calculated the Ca++-F, Ba++-F, Ca++-Ca++, Ba++-Ba++, and F-F interatomic potentials using a semiclassical method. Using these potentials, the anion vacancy and interstitial formation and activation energies were determined. Franklin's potentials were also employed for comparison. The results are in excellent agreement with experiment for BaF2 and for most of the CaF2 results. The unusually wide range (0.53-1.65 eV) of experimental values for interstitial-related activation energies makes this direct comparison in CaF2 difficult, but our results clearly indicate the interstitialcy mechanism of anion interstitial migration to be dominant in both CaF2 and BaF2. Using the same method, the energies of formation of He, Ne, and Ar at interstitial sites in CaF2 were determined to be 0.49, 1.59, and 3.08 eV, respectively. The activation energy for interstitial motion of these atoms was found to be ∼ 1.4 eV for all three gases. Furthermore, we find it takes 0.25, 0.95, and 2.30 eV to place a He, Ne, or Ar gas atom, respectively, in an existing anion vacancy. The substitutional detrapping energy, the energy required to move a rare-gas atom from an anion vacancy to its nearest-neighbor stable interstitial position, was found to be 1.8, 2.1, and 2.5 eV for He, Ne, and Ar, respectively. The explicit atomistic calculation is done for many regions of varying size surrounding each defect so that it is possible to say, at least semiquantitatively, that the energy vs radius of the region rA varies as 1rA for charged defects and as 1rA2 for neutral defects.

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