Optoelectronic measurement of semiconductor surfaces and interfaces with femtosecond optics

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Abstract
The basic concepts and preliminary applications of optically induced electromagnetic radiation from semiconductor surfaces and interfaces by using femtosecond optics are discussed. This submillimeter‐wave radiation provides a novel optoelectronic technique to study semiconductor electronic surface and interface properties with a contactless approach. The amplitude and phase of the electromagnetic radiation from the semiconductor surfaces depend on carrier mobility, impurity doping concentration, and strength and polarity of the static internal field. A large selection of bulk, epitaxial layer and superlattice samples from III‐V, II‐VI and group‐IV semiconductors has been tested. The orientation and strength of the static built‐in fields of a wide range of semiconductor surfaces, such as surface depletion, metal/semiconductor Schottky, p‐n junction and strain‐induced piezoelectric fields, can be determined and estimated.