Fabrication of n–p junction electrodes made of n-type SnO2 and p-type NiO for control of charge recombination in dye sensitized solar cells
- 1 March 2004
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 81 (4) , 429-437
- https://doi.org/10.1016/j.solmat.2003.11.027
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Electron Injection and Recombination in Ru(dcbpy)2(NCS)2 Sensitized Nanostructured ZnOThe Journal of Physical Chemistry B, 2001
- Dye-Sensitized Nanostructured p-Type Nickel Oxide Film as a Photocathode for a Solar CellThe Journal of Physical Chemistry B, 1999
- An efficient dye-sensitized photoelectrochemical solar cell made from oxides of tin and zincChemical Communications, 1999
- Photoelectrochemical Properties of a Porous Nb2O5 Electrode Sensitized by a Ruthenium DyeChemistry of Materials, 1998
- Nanocrystalline Titanium Oxide Electrodes for Photovoltaic ApplicationsJournal of the American Ceramic Society, 1997
- High Light-to-Energy Conversion Efficiencies for Solar Cells Based on Nanostructured ZnO ElectrodesThe Journal of Physical Chemistry B, 1997
- Visible Light Sensitization by cis-Bis(thiocyanato)bis(2,2'-bipyridyl-4,4'-dicarboxylato)ruthenium(II) of a Transparent Nanocrystalline ZnO Film Prepared by Sol-Gel TechniquesChemistry of Materials, 1994
- A low-cost, high-efficiency solar cell based on dye-sensitized colloidal TiO2 filmsNature, 1991
- Light-harvesting effect in photoelectric conversion with dye multilayers on a semiconductor electrodeThe Journal of Physical Chemistry, 1988
- Two-layer organic photovoltaic cellApplied Physics Letters, 1986