Some aspects of hot-electron aging in MOSFET's
- 1 October 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 31 (10) , 1381-1386
- https://doi.org/10.1109/t-ed.1984.21720
Abstract
The injection of hot carriers from Si into SiO_{2} in various MOSFET structures is characterized via direct measurements of gate current. A method of mapping gate currents as a function of both gate and drain bias potentials is described. The deterioration of device parameters with hot-electron injection is also characterized, and it is proposed that the rate of aging is a function not only of the injection and trapping efficiencies, but also of the physical location of the trapped charge.Keywords
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