Simulations of layer-by-layer sputtering during epitaxy
- 30 December 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (27) , 3533-3535
- https://doi.org/10.1063/1.105648
Abstract
We have performed computer simulations of simultaneous and sequential ion bombardment and epitaxial growth. In agreement with recent reflection high-energy electron diffraction (RHEED) measurements on Si, we observe ion-induced RHEED oscillations, a cancellation of RHEED oscillations during simultaneous equal-rate ion bombardment and growth, and a reversal of growth-induced roughening by subsequent ion bombardment. Comparison between simulations and measurements indicate that a model of the ion/surface interaction characterized by the creation of mobile vacancies with minimal preferential sputtering is sufficient to simulate all the RHEED measurements.Keywords
This publication has 4 references indexed in Scilit:
- Layer-by-layer sputtering and epitaxy of Si(100)Physical Review Letters, 1991
- Effect of step edge transition rates and anisotropy in simulations of epitaxial growthJournal of Vacuum Science & Technology A, 1991
- Ion beam enhanced epitaxial growth of Ge (001)Applied Physics Letters, 1990
- Surface roughening of Ge(001) during 200 eV Xe ion bombardment and Ge molecular beam epitaxyJournal of Vacuum Science & Technology A, 1990