Planar indium-diffused lead telluride detector arrays
- 30 March 1978
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 14 (7) , 209-210
- https://doi.org/10.1049/el:19780141
Abstract
Lead telluride detector arrays have been made by diffusing indium into arsenic-doped p-type lead telluride. Planar devices have a resistance-area product R0A ≃ 10 Ω cm2 at 180 K and a black body detectivity (D* 500 K) ≃ 6×109 cm Hz½ W−1 a typical array showing a responsivity variation of ±20%. The temperature variation of R0A is consistent with an abrupt junction model with an Auger-limited lifetime.Keywords
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