The preparation of single-crystal ingots of silicon by the pulling technique
- 1 October 1958
- journal article
- Published by IOP Publishing in Journal of Scientific Instruments
- Vol. 35 (10) , 360-365
- https://doi.org/10.1088/0950-7671/35/10/304
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Some defects in crystals grown from the melt - I. Defects caused by thermal stressesProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1956
- A four-point probe apparatus for measuring resistivityJournal of Scientific Instruments, 1956