Point defect calculations in diamond-type crystals by the extended Huckel method II: The substitutional impurity problem
- 31 December 1971
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 4 (18) , 3077-3082
- https://doi.org/10.1088/0022-3719/4/18/013
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Point defect calculations in diamond-type crystals by the extended Huckel method 1: General theory and the vacancy problemJournal of Physics C: Solid State Physics, 1971
- Influence of Hydrostatic Pressure and Temperature on the Deep Donor Levels of Sulfur in SiliconPhysical Review B, 1970
- Absorption of oxygen in silicon in the near and the far infraredProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1970
- Higher Donor Excited States for Prolate-Spheroid Conduction Bands: A Reevaluation of Silicon and GermaniumPhysical Review B, 1969
- Vibrational absorption of carbon and carbon-oxygen complexes in siliconJournal of Physics and Chemistry of Solids, 1969
- Ultraviolet Intrinsic and Extrinsic Photoconductivity of Natural DiamondPhysical Review B, 1967
- Bound Excitons and Donor-Acceptor Pairs in Natural and Synthetic DiamondPhysical Review B, 1965
- Paramagnetic Resonance Study of a Deep Donor in SiliconPhysical Review B, 1965
- Atomic Screening Constants from SCF FunctionsThe Journal of Chemical Physics, 1963
- Absorption spectra of impurities in silicon—IJournal of Physics and Chemistry of Solids, 1956