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Modeling of Oxygen Depth Profiles in High Dose Oxygen-Implanted Silicon
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Modeling of Oxygen Depth Profiles in High Dose Oxygen-Implanted Silicon
Modeling of Oxygen Depth Profiles in High Dose Oxygen-Implanted Silicon
HJ
H. Jaeger
H. Jaeger
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1 January 1991
journal article
Published by
Trans Tech Publications, Ltd.
in
Solid State Phenomena
Vol. 1-2
,
11-32
https://doi.org/10.4028/www.scientific.net/ssp.1-2.11
Abstract
No abstract available
Cited
Cited by 7 articles
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