Laser-induced anisotropic absorbtion, reflection, and scattering of light in chalcogenide glassy semiconductors

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Abstract
Anisotropy induced in thin-film and bulk samples of chalcogenide glassy semiconductors by the linearly polarized light of different spectral ranges is studied. Three different ranges of exciting photon energy can be distinguished. 1) Above-band-gap light excitation is studied in film samples, two distinct processes are identified in this range: creation of photoinduced defects and their photostimulated orientation and reorientation; a “defect-based” model of photoinduced anisotropy is further developed. 2) Subband-gap light excitation is studied in bulk samples; creation of anisotropically scattered centers is assumed to be the basis of all photoinduced vector phenomena in that spectral range. 3) Superband-gap light excitation is studied in film and bulk samples because the application of differential reflectance spectroscopy; it was shown that not only defects but also main covalent bonds of the glass can be oriented and reoriented by the linearly polarized light that generates the photoinduced dichroism in this spectral interval.