Electronic States of CdIn2Se4 and ZnIn2Se4: Role of the Cation Pseudovacancies
- 1 February 1981
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 103 (2) , 725-731
- https://doi.org/10.1002/pssb.2221030233
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Photon polarisation effects in angle-integrated photoemission spectroscopy: a simple experimental geometryJournal of Physics E: Scientific Instruments, 1979
- (110) surface states of GaAs: Sensitivity of electronic structure to surface structurePhysical Review B, 1978
- Crystal structure effects in the valence band of the defect zinc blend semiconductor CdIn2Se4Physics Letters A, 1978
- Synchrotron radiation photoemission spectroscopy of III-VI compoundsPhysical Review B, 1977
- Electronic properties of the defect-zincblende semiconductor CdIn4Se4Solid State Communications, 1977
- Photoemission spectroscopy using synchrotron radiation. I. Overviews of valence-band structure for Ge, GaAs, GaP, InSb, ZnSe, CdTe, and AglPhysical Review B, 1974
- Surface and Bulk Contributions to Ultraviolet Photoemission Spectra of SiliconPhysical Review Letters, 1974
- Total valence-band densities of states of III-V and II-VI compounds from x-ray photoemission spectroscopyPhysical Review B, 1974
- Photoemission and density of valence states of the II–VI compounds. I. ZnTe, CdSe, CdTe, HgSe, and HgTePhysica Status Solidi (b), 1973