A photoconductivity decay model applied to silver-doped silicon†

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Abstract
A model is developed for the decay of photoconductivity after a pulse of band gap light is applied to a semiconductor containing a deep acceptor with an energy level in the upper half of the band-gap, partially compensated by a shallow donor. A closed-form solution is obtainable for the return to the equilibrium conductivity if appropriate simplifications are made. Application of the model to the acceptor level, Ec −0[sdot]29 ev, of silver in silicon predicts results for the transient behaviour that are in good agreement with the experimental curves over the temperature range studied, 77° K–125° K. The capture cross section indicated for electron capture by u neutral silver atom is about 10−17 cm2.

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