Cellular automata simulation of stationary and transient high-field transport in submicron Si and GaAs devices

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Abstract
The authors present a detailed discussion, critical tests and applications of a new lattice gas simulation technique for high-field transport in semiconductors. This method may be viewed as a variant of the ensemble Monte Carlo technique but can easily handle ensembles with more than 105 particles, can efficiently deal with complex geometries and achieve accelerations on multiprocessor computers that scale linearly with the number of processors. The stationary and transient transport properties of Si and GaAs that have been calculated with this new technique compare very favourably with the standard Monte Carlo results.