A new dielectric facet reflector for semiconductor lasers
- 1 June 1978
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (11) , 724-725
- https://doi.org/10.1063/1.89899
Abstract
Described in this letter is a new dielectric reflector designed for injection laser facets which consists of alternating quarter‐wavelength layers of Al2O3 and Si. The reflectivity for six layers can be made ≳0.98 over a wavelength range from ∼0.7 to ≳2 μm. By choosing the appropriate number of quarter‐wavelength layers and the final layer thickness the reflectivity can be varied between 0.01 and 0.98. Finally, both Si and Al2O3 are impervious to the chemical cleaning and wetting agents and solders used during the mounting of (AlGa)As cw injection lasers.Keywords
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