Silicon triangular barrier diodes by MBE using solid-phase epitaxial regrowth

1 July 1984

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 5 (7) , 254-256
https://doi.org/10.1109/edl.1984.25908

Abstract

Triangular barrier diodes have been fabricated in silicon using molecular beam epitaxy (MBE). The extreme profile changes necessary for these devices are realized by growing the desired structure in amorphous silicon layers, which are then crystallized in situ using solid-phase epitaxial regrowth. The resulting diode I-V characteristics compare well with those predicted, and capacitance values are nearly constant, regardless of bias.

Keywords

DIODES
MOLECULAR BEAM EPITAXIAL GROWTH
CRYSTALLIZATION
FABRICATION
SUBSTRATES
AMORPHOUS SILICON
THERMIONIC EMISSION
TEMPERATURE
CLEANING
CAPACITANCE

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